?2001 fairchild semiconductor corporation fsgyc164r rev. b fsgyc164r radiation hardened, segr resistant n-channel power mosfet fairchild star*power rad hard mosfets have been specifically developed for high performance applications in a commercial or military space environment. star*power mosfets offer the system designer both extremely low r ds(on) and gate charge allowing the development of low loss power subsystems. star*power gold fets combine this electrical capability with total dose radiation hardness up to 100 krads while maintaining the guaranteed performance for single event effects (see) which the fairchild fs families have always featured. the fairchild family of star*power fets includes a series of devices in various voltage, current and package styles. the portfolio consists of star*power and star*power gold products. star*power fets are optimized for total dose and r ds(on) while exhibiting see capability at full rated voltage up to an let of 37. star*power gold fets have been optimized for see and gate charge combining see performance to 80% of the rated volt age for an let of 82 with extremely low gate charge characteristics. this mosfet is an enhancement-mode silicon-gate power field effect transistor of the vertical dmos (vdmos) structure. it is specifically designed and processed to be radiation tolerant. the mosfet is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. as with conventional mosfets these radiation hardened mosfets offer ease of voltage control, fast switching speeds and ability to parallel switching devices. reliability screening is available as either txv or space equivalent of mil-prf-19500. formerly available as type ta45229w. features ? 69a, 150v, r ds(on) = 0.023 ? uis rated total dose - meets pre-rad specifications to 100 krad (si) single event - safe operating area curve for single event effects - see immunity for let of 82mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 5v off-bias dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i as photo current - 14na per-rad (si)/s typically neutron - maintain pre-rad specifications for 1e13 neutrons/cm 2 - usable to 1e14 neutrons/cm 2 symbol packaging smd2 ordering information rad level screening level part number/brand 10k engineering samples FSGYC164D1 100k txv fsgyc164r3 100k space fsgyc164r4 tm d g s data sheet december 2001
?2001 fairchild semiconductor corporation fsgyc164r rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified fsgs130r units drain to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ds 150 v drain to gate voltage (r gs = 20k ? ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dgr 150 v continuous drain current t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 69 a t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 44 a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 200 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gs 30 v maximum power dissipation t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p t 208 w t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p t 83 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 w/ o c single pulsed avalanche current, l = 100 h, (see test figure) . . . . . . . . . . . . . . . . . . . . . . . . i as 130 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i s 69 a pulsed source current (body diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i sm 200 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c lead temperature (during soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l (distance >0.063in (1.6mm) from case, 10s max) 300 o c weight (typical) 3.3 (typical) g caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 1ma, v gs = 0v 150 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 1ma t c = -55 o c--5.5v t c = 25 o c2.0-4.5v t c = 125 o c1.0--v zero gate voltage drain current i dss v ds = 120v, v gs = 0v t c = 25 o c--25 a t c = 125 o c - - 250 a gate to source leakage current i gss v gs = 30v t c = 25 o c - - 100 na t c = 125 o c - - 200 na drain to source on-state voltage v ds(on) v gs = 12v, i d = 69a - - 1.725 v drain to source on resistance r ds(on)12 i d = 44a, v gs = 12v t c = 25 o c - 0.017 0.023 ? t c = 125 o c - - 0.042 ? turn-on delay time t d(on) v dd = 75v, i d = 69a, r l = 1.09 ? , v gs = 12v, r gs = 2.35 ? - - 35 ns rise time t r - - 125 ns turn-off delay time t d(off) - - 65 ns fall time t f - - 15 ns total gate charge q g(12) v gs = 0v to 12v v dd = 75v, i d = 69a - 100 115 nc gate charge source q gs -3545nc gate charge drain q gd -3545nc gate charge at 20v q g(20) v gs = 0v to 20v - 160 - nc threshold gate charge q g(th) v gs = 0v to 2v - 12 - nc plateau voltage v (plateau) i d = 69a, v ds = 15v - 7.5 - v input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz - 5700 - pf output capacitance c oss - 1160 - pf reverse transfer capacitance c rss -45-pf thermal resistance junction to case r jc --0.6 o c/w fsgyc164r
?2001 fairchild semiconductor corporation fsgyc164r rev. b source to drain diode specifications parameter symbol test conditions min typ max units forward voltage v sd i sd = 69a - - 1.2 v reverse recovery time t rr i sd = 69a, di sd /dt = 100a/ s - - 370 ns reverse recovery charge q rr -3.2- c electrical specifications up to 100 krad t c = 25 o c, unless otherwise specified parameter symbol test conditions min max units drain to source breakdown volts (note 3) bv dss v gs = 0, i d = 1ma 150 - v gate to source threshold volts (note 3) v gs(th) v gs = v ds , i d = 1ma 2.0 4.5 v gate to body leakage (notes 2, 3) i gss v gs = 30v, v ds = 0v - 100 na zero gate leakage (note 3) i dss v gs = 0, v ds = 120v - 25 a drain to source on-state volts (notes 1, 3) v ds(on) v gs = 12v, i d = 69a - 1.725 v drain to source on resistance (notes 1, 3) r ds(on)12 v gs = 12v, i d = 44a - 0.023 ? notes: 1. pulse test, 300 s max. 2. absolute value. 3. insitu gamma bias must be sampled for both v gs = 12v, v ds = 0v and v gs = 0v, v ds = 80% bv dss . single event effects (seb, segr) note 4 test symbol environment (note 5) applied v gs bias (v) (note 7) maximum v ds bias (v) (note 6) typical let (mev/mg/cm) typical range ( ) single event effects safe operating area seesoa 37 36 -20 150 60 32 -10 150 82 28 -5 120 82 28 -10 90 notes: 4. testing conducted at brookhaven national labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. ion species: let = 37, br or kr ; let = 60, i or xe; let = 82, au. 7. does not exhibit single event burnout (s eb) or single event gate rupture (segr). performance curves unless otherwise specified figure 1. single event effects safe operating area figure 2. typical see signature curve 0 0-20 let = 60mev/mg/cm 2 , range = 32 let = 37mev/mg/cm 2 , range = 36 let = 82mev/mg/cm 2 , range = 28 -4 -8 -12 -16 v gs (v) -2 4 150 100 50 v ds (v) fluence = 1e5 ions/cm 2 (typical) temp = 25 o c v ds (v) 120 80 40 0 0 negative v gs bias (v) 20 let = 37 let = 82 let = 60 160 200 51015 2530 40 35 fsgyc164r
?2001 fairchild semiconductor corporation fsgyc164r rev. b figure 3. typical drain inductance required to limit gamma dot current to i as figure 4. maximum cont inuous drain current vs temperature figure 5. forward bias safe operating area figure 6. basic gate charge waveform figure 7. typical normalized r ds(on) vs junction temperature figure 8. typical output characteristics performance curves unless otherwise specified (continued) 300 100 10 limiting inductance (henry) drain supply (v) 1000 ilm = 10a 300a 1e-4 1e-5 1e-6 30 100a 30a 1e-7 1e-3 i d , drain (a) t c , case temperature ( o c) 150 100 50 0 -50 0 20 40 30 10 80 70 60 50 100 10 1 110100 500 i d , drain current (a) 100 s operation in this area may be limited by r ds(on) 10ms 1ms 500 25 0 c v ds , drain to source voltage (v) charge q gd q g v g q gs 12v 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 normalized r ds(on) t j , junction temperature ( o c) pulse duration = 250ms, v gs = 12v, i d = 44a 10 8 6 4 2 0 0 v ds , drain to source voltage (v) i d , drain to source current (a) 80 40 v gs = 6v v gs = 6v v gs = 8v v gs = 10v v gs = 12v v gs = 14v 120 160 200 fsgyc164r
?2001 fairchild semiconductor corporation fsgyc164r rev. b figure 9. normalized maximum transient thermal response figure 10. unclamped inductive switching performance curves unless otherwise specified (continued) normalized thermal response (z qjc ) t, rectangular pulse duration (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -3 10 -2 10 -1 10 0 10 1 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc + t c p dm t 1 t 2 100 10 1 0.01 0.1 1 t av , time in avalanche (ms) 10 i as , avalanche current (a) t av = (l/r) ln [(i as *r) / (1.3 rated bv dss - v dd ) + 1] t av = (l) (i as ) / (1.3 rated bv dss - v dd ) if r = 0 starting t j = 150 o c starting t j = 25 o c if r 0 1000 test circuits and waveforms figure 11. unclamped energy test circuit figure 12. unclamped energy waveforms t p v gs 20v l + - v ds v dd dut vary t p to obtain required peak i as 0 v 50 ? 50 ? 50v-150 v i as + - electronic switch opens when i as is reached current transformer v dd v ds bv dss t p i as t av fsgyc164r
?2001 fairchild semiconductor corporation fsgyc164r rev. b screening information screening is performed in accordance with the latest re vision in effect of mil-prf -19500, (screening inf ormation table). figure 13. resistive switching test circui t figure 14. resistive switching waveforms test circuits and waveforms (continued) v ds dut r gs 0v v gs = 12v v dd r l t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on delta tests and limits (jantxv equivalent, jans equivalent) t c = 25 o c, unless otherwise specified parameter symbol test conditions max units gate to source leakage current i gss v gs = 30v 20 (note 7) na zero gate voltage drain current i dss v ds = 80% rated value 25 (note 7) a drain to source on resistance r ds(on) t c = 25 o c at rated i d 20% (note 8) ? gate threshold voltage v gs(th) i d = 1.0ma 20% (note 8) v notes: 8. or 100% of initial reading (whichever is greater). 9. of initial reading. screening information test jantxv equivalent jans equivalent unclamped inductive switching v gs(peak) = 20v, l = 0.1mh; limit = 130a v gs(peak) = 20v, l = 0.1mh; limit = 130a thermal response t h = 10ms; v h = 25v; i h = 4a; limit = 55mv t h = 10ms; v h = 25v; i h = 4a; limit = 55mv gate stress v gs = 45v, t = 250 sv gs = 45v, t = 250 s pind optional required pre burn-in tests (note 9) mil-prf-19500 group a, subgroup 2 (all static tests at 25 o c) mil-prf-19500 group a, subgroup 2 (all static tests at 25 o c) steady state gate bias (gate stress) mil-prf-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours mil-prf-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours interim electrical tests (note 9) all delta parameters listed in the delta tests and limits table all delta parameters listed in the delta tests and limits table steady state reverse bias (drain stress) mil-prf-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 160 hours mil-prf-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 240 hours pda 10% 5% final electrical tests (note 9) mil-prf-195 00, group a, subgroup 2 mil-prf-19500, group a, subgroups 2 and 3 note: 10. test limits are ident ical pre and post burn-in. additional tests parameter symbol test conditions max units safe operating area soa v ds = 120v, t = 10ms 3.0 a thermal impedance ? v sd t h = 500ms; v h = 20v; i h = 4a heat sink required 115 mv fsgyc164r
?2001 fairchild semiconductor corporation fsgyc164r rev. b rad hard data packages - fairchild power transistors txv equivalent 1. rad hard txv equivale nt - standard data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet d. group a - attributes data sheet e. group b - attributes data sheet f. group c - attributes data sheet g. group d - attributes data sheet 2. rad hard txv equivalent - optional data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet - pre and post burn-in read and record data d. group a - attributes data sheet e. group b - attributes data sheet - pre and post read and record data for intermittent operating life (subgroup b3) - bond strength data (subgroup b3) - pre and post high temperature operating life read and record data (subgroup b6) f. group c - attributes data sheet - pre and post read and record data for intermittent operating life (subgroup c6) - bond strength data (subgroup c6) g. group d - attributes data sheet - pre and post rad read and record data class s - equivalents 1. rad hard ?s? equivalent - standard data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. rad hard max. ?s? equivalent - optional data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - pre and post radiation data fsgyc164r
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